Datasheet IKD04N60R - Infineon IGBT+ DIODE,600V,4A,TO252

Infineon IKD04N60R

Part Number: IKD04N60R

Detailed Description

Manufacturer: Infineon

Description: IGBT+ DIODE,600V,4A,TO252

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Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 4 A
  • Collector Emitter Voltage Vces: 2.1 V
  • Power Dissipation Max: 75 W
  • Collector Emitter Voltage V(br)ceo: 600 V
  • Operating Temperature Range: -40°C to +175°C
  • Transistor Case Style: TO-252
  • Number of Pins: 3

RoHS: Yes

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