Datasheet FZ1000R33HL3 - Infineon IGBT, HI PO, 1 S/W, 3300 V, 1000 A

Detailed Description

Manufacturer: Infineon

Description: IGBT, HI PO, 1 S/W, 3300 V, 1000 A

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Specifications:

• Collector Emitter Voltage V(br)ceo: 3.3 kV
• Collector Emitter Voltage Vces: 2.4 V
• DC Collector Current: 1000 A
• Module Configuration: Dual
• Number of Pins: 7
• Operating Temperature Range: -50°C to +150°C
• Power Dissipation Max: 9.6 kW
• Transistor Case Style: Module
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• DAVICO - D 25-10
• TE Connectivity - 0-0160170-0