Datasheet 2DB1713-13 - Diodes TRANSISTOR, PNP, SOT89, 0.9 W

Detailed Description

Manufacturer: Diodes

Description: TRANSISTOR, PNP, SOT89, 0.9 W

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Docket:
2DB1713
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
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Features
· · · · · · Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Complementary NPN Type Available (2DD2678) Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)

Specifications:

• Collector Emitter Voltage V(br)ceo: 12 V
• Collector Emitter Voltage Vces: 250 mV
• Current Ic Continuous a Max: 1.5 A
• DC Collector Current: 1.5 A
• DC Current Gain Min: 270
• DC Current Gain: 270
• Gain Bandwidth ft Typ: 180 MHz
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-89
• Power Dissipation: 900 mW
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: SOT-89
• Transistor Polarity: PNP
• Transistor Type: Low Saturation (BISS)
• Transition Frequency Typ ft: 180 MHz

RoHS: Yes

Other Names:

2DB171313, 2DB1713 13