Datasheet NTE Electronics 2N5210

2N5210
Silicon NPN Transistor
Audio Amplifier, Switch
TO−92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 50V
Collector−Base Voltage, VCBO . 50V
Emitter−Base Voltage, VEBO 4V
Continuous Collector Current, IC . 50mA
Total Device Dissipation (TA = +25C), PD . 625mW
Derate Above 25C . 5.0mW/C
Total Device Dissipation (TC = +25C), PD 1.5W
Derate Above 25C 12mW/C
Operating Junction Temperature Range, TJ −55 to +150C
Storage Temperature Range, Tstg −55 to +150C
Thermal Resistance, Junction−to−Case, RthJC 83.3C/W
Thermal Resistance, Junction−to−Ambient, RthJA 200C/W
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 50 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 50 − − V Collector Cutoff Current ICBO VCB = 35V, IE = 0 − − 50 nA Emitter Cutoff Current IEBO VEB = 3V, IC = 0 − − 50 nA hFE VCE = 5V, IC = 100A 200 − 600 VCE = 5V, IC = 1mA 250 − − VCE = 5V, IC = 10mA, Note 1 250 − − ON Characteristics
DC Current Gain Collector−Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA − − 0.7 V Base−Emitter ON Voltage VBE(on) IC = 1mA, VCE = 5V − − 0.85 V Note 1. Pulse Test: Pulse Width 300s, Duty Cycle = 2%. Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit IC = 500A, VCE = 5V, f = 20MHz 30 − − MHz − − 4 pF Small−Signal Characteristics
Current Gain−Bandwidth Product fT Collector−Base Capacitance Ccb VCB = 5V, IE = 0, f = 1MHz Small−Signal Current Gain hfe IC = 1mA, VCE = 5V, f = 1kHz 250 − 900 Noise Figure NF IC = 20A, VCE = 5V, f = 1kHz, …