Datasheet NTE316 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 15 V

Detailed Description

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 15 V

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Docket:
NTE316 Silicon NPN Transistor High Gain, Low Noise Amp
Features: D High Current Gain­Bandwidth Product D Low Noise Figure D High Power Gain Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Continuous Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14mW/°C Storage Te

Specifications:

• Collector Emitter Voltage V(br)ceo: 15 V
• DC Collector Current: 50 mA
• DC Current Gain Max (hfe): 25
• Power Dissipation Pd: 200 mW
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 1.4 GHz

RoHS: Yes