Datasheet BU2508AX - NXP TRANSISTOR, NPN, SOT-399

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, NPN, SOT-399

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Docket:
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AX
GENERAL DESCRIPTION

Specifications:

• Collector-to-Emitter Breakdown Voltage: 700 V
• DC Current Gain Min: 4
• DC Current Gain: 4.5 A
• Fall Time @ Ic: 0.6 µs
• Max Current Ic Continuous a: 8 A
• Max Current Ic: 8 A
• Max Power Dissipation Ptot: 45 W
• Max Voltage Vce Sat: 1 V
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: SOT-399
• Power Dissipation: 45 W
• Saturation Current Ic: 4.5 A
• Transistor Case Style: SOT-399
• Transistor Polarity: NPN
• Transistor Type: Power High Voltage Switching
• Voltage Vces: 1500 V

RoHS: Yes