Datasheet PBSS306PZ,135 - NXP TRANS PNP 100 V 4.1 A SOT-223

Detailed Description

Manufacturer: NXP

Description: TRANS PNP 100 V 4.1 A SOT-223

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Docket:
PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
Rev.

02 -- 11 December 2009 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Collector Emitter Voltage V(br)ceo: -100 V
• Collector Emitter Voltage Vces: -65 mV
• Current Ic Continuous a Max: -500 mA
• DC Collector Current: -4.1 A
• DC Current Gain Min: 200
• DC Current Gain: 300
• Gain Bandwidth ft Typ: 100 MHz
• Mounting Type: SMD
• Number of Pins: 4
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-223
• Power Dissipation: 700 mW
• Transistor Case Style: SOT-223
• Transistor Polarity: PNP
• Transistor Type: Low Saturation (BISS)
• Transition Frequency Typ ft: 100 MHz
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)

Other Names:

PBSS306PZ135, PBSS306PZ 135