Datasheet PDTA115ET - NXP TRANSISTOR, DIGITAL, SOT-23

NXP PDTA115ET

Part Number: PDTA115ET

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, DIGITAL, SOT-23

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA115E series PNP resistor-equipped transistors; R1 = 100 k, R2 = 100 k
Product specification Supersedes data of 2004 May 05 2004 Jul 30
Philips Semiconductors

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 50 V
  • Collector Emitter Voltage Vces: -150 mV
  • Continuous Collector Current Ic Max: 100 mA
  • Current Ic Continuous a Max: 100 mA
  • DC Collector Current: 100 mA
  • DC Current Gain Min: 80
  • DC Current Gain: 5 µA
  • Full Power Rating Temperature: 25°C
  • Mounting Type: SMD
  • Number of Pins: 3
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-23
  • Power Dissipation Pd: 250 mW
  • Power Dissipation Ptot Max: 250 mW
  • Resistance R1: 100 kOhm
  • Resistance R2: 100 kOhm
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SOT-23
  • Transistor Polarity: PNP
  • Transistor Type: Bias Resistor (BRT)
  • Voltage Vcbo: -50 V

RoHS: Yes

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