Datasheet MMBT5088LT1G - ON Semiconductor BIPOLAR TRANSISTOR, NPN, 30 V

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, NPN, 30 V

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Docket:
MMBT5088LT1G, MMBT5089LT1G Low Noise Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 1 BASE Symbol MMBT5088 MMBT5089 MMBT5088 MMBT5089 VCEO Value 30 25 35 30 4.5 50 Unit Vdc 2 EMITTER
· These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Specifications:

• Collector Emitter Voltage V(br)ceo: 30 V
• DC Collector Current: 50 mA
• DC Current Gain Max (hfe): 50
• Power Dissipation Pd: 225 mW
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 50 MHz

RoHS: Yes