Datasheet MJD350T4G - ON Semiconductor BIPOLAR TRANSISTOR, PNP, -300 V

ON Semiconductor MJD350T4G

Part Number: MJD350T4G

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, PNP, -300 V

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 300 V
  • DC Collector Current: 500 mA
  • DC Current Gain Max (hfe): 240
  • Operating Temperature Range: -65°C to +150°C
  • Power Dissipation Pd: 15 W
  • Transistor Polarity: P Channel

RoHS: Yes

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