Datasheet Diodes ZXM61N02F

ZXM61N02F
20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY
V(BR)DSS=20V; RDS(ON)=0.18V; ID=1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications. SOT23 FEATURES
• Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package APPLICATIONS
• DC -DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH (mm) QUANTITY
PER REEL
Top View ZXM61N02FTA 7 8mm embossed 3000 units ZXM61N02FTC 13 8mm embossed 10000 units DEVICE MARKING
• N02 ISSUE 1 -JUNE 2004
1 ZXM61N02F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate Source Voltage V GS ± 12 V Continuous Drain Current (V GS=4.5V; T A=25°C)(b)
(V GS=4.5V; T A=70°C)(b) ID 1.7
1.3 A Pulsed Drain Current (c) I DM 7.4 A Continuous Source Current (Body Diode) (b) IS 0.8 A Pulsed Source Current (Body Diode) I SM 7.4 A Power Dissipation at T A=25°C (a)
Linear Derating Factor PD 625
5 mW
mW/°C Power Dissipation at T A=25°C (b) …