Datasheet FDD4685 - Fairchild MOSFET, P, SMD, TO-252

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, P, SMD, TO-252

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Docket:
FDD4685 40V P-Channel PowerTrench® MOSFET
October 2006
FDD4685 40V P-Channel PowerTrench® MOSFET
­40V, ­32A, 27m Features General Description
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.

Max rDS(on) = 27m at VGS = ­10V, ID = ­8.4A Max rDS(on) = 35m at VGS = ­4.5V, ID = ­7A High performance trench technology for extremely low rDS(on) RoHS Compliant

Specifications:

• Continuous Drain Current Id: 32 A
• Current Id Max: -8.4 A
• Drain Source Voltage Vds: 40 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 27 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: DPAK
• Power Dissipation: 69 W
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: -1.6 V
• Transistor Case Style: TO-252
• Transistor Polarity: P Channel
• Voltage Vds Typ: -40 V
• Voltage Vgs Max: -20 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes