FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description Features This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V). • –20 V, –2.4 A. RDS(ON) = 0.055 Ω @ VGS = –4.5 V
RDS(ON) = 0.080 Ω @ VGS = –2.5 V • Fast switching speed
• High performance trench technology for extremely
low RDS(ON) Applications
• Power management • SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint • Load switch
• Battery protection D D S
S G
TM SuperSOT -3 G Absolute Maximum Ratings
Symbol TA=25oC unless otherwise noted Drain-Source Voltage Ratings
–20 Units VDSS Parameter VGSS Gate-Source Voltage ±12 V ID Drain Current (Note 1a) –2.4
–10 A (Note 1a) 0.5 W – Continuous
– Pulsed PD Maximum Power Dissipation (Note 1b) TJ, TSTG V 0.46 –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity 302 FDN302P 7’’ 8mm 3000 units 2000 Fairchild Semiconductor Corporation FDN302P Rev C(W) FDN302P October 2000 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –12 mV/°C Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS …
