Datasheet FQB55N10 - Fairchild MOSFET, N, D2-PAK

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, N, D2-PAK

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Docket:
FQB55N10 / FQI55N10
August 2000
QFET
FQB55N10 / FQI55N10
100V N-Channel MOSFET

Specifications:

• Continuous Drain Current Id: 55 A
• Current Id Max: 55 A
• Drain Source Voltage Vds: 100 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 26 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: D2-PAK
• Power Dissipation on 1 Sq.

  PCB: 3.75 W

• Power Dissipation: 155 W
• Pulse Current Idm: 220 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: FQB55N10
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: D2-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vds: 100 V
• Voltage Vgs Max: 25 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V

RoHS:  No