Datasheet NDS332P - Fairchild MOSFET, P, SMD, SSOT-3

Fairchild NDS332P

Part Number: NDS332P

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, P, SMD, SSOT-3

Docket:
June 1997
NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features

Specifications:

Continuous Drain Current Id: -1 A
Current Id Max: 1 A
Drain Source Voltage Vds: -20 V
Mounting Type: SMD
Number of Pins: 3
On Resistance Rds(on): 300 MOhm
Package / Case: SuperSOT-3
Power Dissipation: 500 mW
Rds(on) Test Voltage Vgs: -4.5 V
SVHC: No SVHC (19-Dec-2011)
Threshold Voltage Vgs Typ: -600 mV
Transistor Case Style: SuperSOT
Transistor Polarity: P Channel
Voltage Vds Typ: -20 V
Voltage Vgs Max: -600 mV
Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes