Datasheet NDS332P - Fairchild MOSFET, P, SMD, SSOT-3
Part Number: NDS332P
Detailed Description
Manufacturer: Fairchild
Description: MOSFET, P, SMD, SSOT-3
Docket:
June 1997
NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
Specifications:
- Continuous Drain Current Id: -1 A
- Current Id Max: 1 A
- Drain Source Voltage Vds: -20 V
- Mounting Type: SMD
- Number of Pins: 3
- On Resistance Rds(on): 300 MOhm
- Package / Case: SuperSOT-3
- Power Dissipation: 500 mW
- Rds(on) Test Voltage Vgs: -4.5 V
- SVHC: No SVHC (19-Dec-2011)
- Threshold Voltage Vgs Typ: -600 mV
- Transistor Case Style: SuperSOT
- Transistor Polarity: P Channel
- Voltage Vds Typ: -20 V
- Voltage Vgs Max: -600 mV
- Voltage Vgs Rds on Measurement: -4.5 V
RoHS: Yes