Datasheet RFD14N05 - Fairchild MOSFET, N, I-PAK

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, N, I-PAK

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Docket:
RFD14N05, RFD14N05SM
Data Sheet February 2004
14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs
These are N-channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770.
Features

Specifications:

• Alternate Case Style: TO-251
• Continuous Drain Current Id: 14 A
• Current Id Max: 14 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 50 V
• Full Power Rating Temperature: 25°C
• Lead Length: 9.65 mm
• Lead Spacing: 2.28 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 100 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: IPAK
• Power Dissipation Pd: 48 W
• Pulse Current Idm: 35 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: RFD14N05
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: I-PAK
• Transistor Polarity: N Channel
• Turn Off Time: 17 ns
• Turn On Time: 26 ns
• Voltage Vds Typ: 50 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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