Datasheet NDS332P.. - Fairchild MOSFET

Detailed Description

Manufacturer: Fairchild

Description: MOSFET

Download Data Sheet

Docket:
June 1997
NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features

Specifications:

• Continuous Drain Current, Id: 1 A
• Drain Source Voltage, Vds: -20 V
• On Resistance, Rds(on): 0.3 Ohm
• Power Dissipation, Pd: 500 mW
• Rds(on) Test Voltage, Vgs: -4.5 V
• Threshold Voltage, Vgs Typ: -600 mV
• Transistor Polarity: P Channel

RoHS: Yes