Datasheet BSP300 L6327 - Infineon MOSFET, N, SOT-223

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N, SOT-223

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Docket:
BSP 300
SIPMOS ® Small-Signal Transistor
· N channel · Enhancement mode · Avalanche rated · VGS(th)= 2.0...

4.0 V
· Pb-free lead plating; RoHS compliant available
Pin 1 G Pin 2 D Pin 3 S Pin 4 D

Specifications:

• Continuous Drain Current Id: 190 mA
• Current Id Max: 190 mA
• Drain Source Voltage Vds: 800 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 20 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 1.8 W
• Pulse Current Idm: 800 mA
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 800 V
• Voltage Vds: 800 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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