Datasheet IPP096N03L G - Infineon MOSFET, N CH, 35 A, 30 V, PG-TO220-3
Part Number: IPP096N03L G
Detailed Description
Manufacturer: Infineon
Description: MOSFET, N CH, 35 A, 30 V, PG-TO220-3
Docket:
Type
IPP096N03L G IPB096N03L G
OptiMOS®3 Power-Transistor
Features · Fast switching MOSFET for SMPS · Optimized technology for DC/DC converters · Qualified according to JEDEC1) for target applications · N-channel, logic level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · Avalanche rated · Pb-free plating; RoHS compliant Type IPP096N03L G IPB096N03L G
Product Summary V DS R DS(on),max ID 30 9.6 35 V m A
Specifications:
- Current Id Max: 35 A
- Drain Source Voltage Vds: 30 V
- Number of Pins: 3
- On Resistance Rds(on): 8 MOhm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 42 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-220
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vgs Max: 20 V
RoHS: Yes