Datasheet IRF6215PBF - International Rectifier MOSFET, P, TO-220

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, P, TO-220

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Docket:
PD - 94817
IRF6215PbF
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
HEXFET® Power MOSFET

Simulation Model

Specifications:

• Avalanche Single Pulse Energy Eas: 310mJ
• Continuous Drain Current Id: 13 A
• Current Id Max: -13 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 150 V
• Full Power Rating Temperature: 25°C
• Lead Spacing: 2.54 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 290 MOhm
• Package / Case: TO-220AB
• Power Dissipation Pd: 110 W
• Power Dissipation Ptot Max: 110 W
• Pulse Current Idm: 44 A
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: -4 V
• Transistor Case Style: TO-220AB
• Transistor Polarity: P Channel
• Voltage Vds Typ: -150 V
• Voltage Vds: 150 V
• Voltage Vgs Max: -4 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5