Datasheet IRF6616TR1 - International Rectifier MOSFET, N, DIRECTFET, MX

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MX

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Docket:
PD - 96999B
IRF6616
DirectFET Power MOSFET
l l l l l l l
RoHS compliant containing no lead or bormide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques

Simulation Model

Specifications:

• Capacitance Ciss Typ: 3765 pF
• Continuous Drain Current Id: 19 A
• Current Id Max: 19 A
• Drain Source Voltage Vds: 40 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -40°C
• Mounting Type: SMD
• Number of Pins: 7
• On Resistance Rds(on): 4.6 MOhm
• Operating Temperature Range: -40°C to +150°C
• Package / Case: MX
• Power Dissipation Pd: 2.8 W
• Pulse Current Idm: 150 A
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Typ: 15 ns
• SMD Marking: 6616
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: MX
• Transistor Polarity: N Channel
• Voltage Vds Typ: 40 V
• Voltage Vds: 40 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes