Datasheet IRF6641TR1PBF - International Rectifier MOSFET, N, DIRECTFET, MZ
Part Number: IRF6641TR1PBF
Detailed Description
Manufacturer: International Rectifier
Description: MOSFET, N, DIRECTFET, MZ
Specifications:
- Avalanche Single Pulse Energy Eas: 46mJ
- Base Number: 6641
- Cont Current Id @ 70В°C: 3.7 A
- Continuous Drain Current Id: 4.6 A
- Current Id Max: 3.7 A
- Drain Source Voltage Vds: 200 V
- Fall Time tf: 65 ns
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -40°C
- MSL: MSL 3 - 168 hours
- Mounting Type: SMD
- Number of Pins: 5
- On Resistance Rds(on): 59.9 MOhm
- Package / Case: MZ
- Power Dissipation: 2.8 mW
- Pulse Current Idm: 37 A
- Rds(on) Test Voltage Vgs: 10 V
- Rise Time: 11 ns
- SVHC: No SVHC (19-Dec-2011)
- Storage Temperature Max: 150°C
- Storage Temperature Min: -40°C
- Threshold Voltage Vgs Typ: 4 V
- Transistor Case Style: DirectFET
- Transistor Polarity: N Channel
- Voltage Vds Typ: 200 V
- Voltage Vds: 200 V
- Voltage Vgs Max: 4 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes