Datasheet IRF6641TR1PBF - International Rectifier MOSFET, N, DIRECTFET, MZ

International Rectifier IRF6641TR1PBF

Part Number: IRF6641TR1PBF

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MZ

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Specifications:

  • Avalanche Single Pulse Energy Eas: 46mJ
  • Base Number: 6641
  • Cont Current Id @ 70В°C: 3.7 A
  • Continuous Drain Current Id: 4.6 A
  • Current Id Max: 3.7 A
  • Drain Source Voltage Vds: 200 V
  • Fall Time tf: 65 ns
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -40°C
  • MSL: MSL 3 - 168 hours
  • Mounting Type: SMD
  • Number of Pins: 5
  • On Resistance Rds(on): 59.9 MOhm
  • Package / Case: MZ
  • Power Dissipation: 2.8 mW
  • Pulse Current Idm: 37 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Rise Time: 11 ns
  • SVHC: No SVHC (19-Dec-2011)
  • Storage Temperature Max: 150°C
  • Storage Temperature Min: -40°C
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: DirectFET
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 200 V
  • Voltage Vds: 200 V
  • Voltage Vgs Max: 4 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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