Datasheet IRF6662TR1PBF - International Rectifier MOSFET, N, DIRECTFET, MZ

International Rectifier IRF6662TR1PBF

Part Number: IRF6662TR1PBF

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MZ

Docket:
PD - 97039A
IRF6662
DirectFETTM Power MOSFET
Typical values (unless otherwise specified)
Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques

Specifications:

Avalanche Single Pulse Energy Eas: 39mJ
Base Number: 6662
Cont Current Id @ 70В°C: 6.6 A
Continuous Drain Current Id: 8.3 A
Current Id Max: 6.6 A
Drain Source Voltage Vds: 100 V
Fall Time tf: 5.9 ns
Junction Temperature Tj Max: 150°C
Junction Temperature Tj Min: -40°C
Mounting Type: SMD
Number of Pins: 5
On Resistance Rds(on): 2.1 MOhm
Package / Case: MZ
Power Dissipation: 2.8 mW
Pulse Current Idm: 66 A
Rds(on) Test Voltage Vgs: 10 V
Rise Time: 7.5 ns
SVHC: No SVHC (19-Dec-2011)
Storage Temperature Max: 150°C
Storage Temperature Min: -40°C
Threshold Voltage Vgs Typ: 3.9 V
Transistor Case Style: DirectFET
Transistor Polarity: N Channel
Voltage Vds Typ: 100 V
Voltage Vds: 25 V
Voltage Vgs Max: 3.9 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes