Datasheet IRF6623TR1 - International Rectifier MOSFET, N, DIRECTFET, ST

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, ST

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Docket:
PD - 95824C
IRF6623
l l l l l l l
Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with Existing Surface Mount Techniques
HEXFET® Power MOSFET

Simulation Model

Specifications:

• Capacitance Ciss Typ: 1360 pF
• Charge Qrr @ Tj = 25В°C Typ: 12nC
• Continuous Drain Current Id: 55 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 20 V
• External Depth: 4.85 mm
• External Length / Height: 0.7 mm
• External Width: 3.95 mm
• Full Power Rating Temperature: 25°C
• IC Package (Case style): ST
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -40°C
• Mounting Type: SMD
• Number of Pins: 7
• Number of Transistors: 1
• On Resistance Rds(on): 5.7 MOhm
• On State Resistance Max: 5.7 MOhm
• Package / Case: ST
• Power Dissipation Pd: 2.1 W
• Pulse Current Idm: 120 A
• Reverse Recovery Time trr Typ: 20 ns
• SMD Marking: 6623
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.2 V
• Transistor Case Style: ST
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vds: 20 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2 V
• Voltage Vgs th Min: 1.3 V

RoHS: Yes

Accessories:

• International Rectifier - IRF6623TR1PBF
• LICEFA - V11-7