Datasheet IRFU3411PBF - International Rectifier MOSFET, N, 100 V, 32 A, I-PAK

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, 100 V, 32 A, I-PAK

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Docket:
PD - 94393
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
G
HEXFET® Power MOSFET

Specifications:

• Alternate Case Style: I-PAK
• Continuous Drain Current Id: 32 A
• Current Id Max: 32 A
• Drain Source Voltage Vds: 100 V
• Junction to Case Thermal Resistance A: 1.2°C/W
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 44 MOhm
• On State resistance @ Vgs = 10V: 44 Ohm
• Package / Case: IPAK
• Power Dissipation Pd: 130 W
• Pulse Current Idm: 110 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: I-PAK
• Transistor Polarity: N Channel
• Turn Off Time: 35 ns
• Turn On Time: 35 ns
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Y-Ex

Accessories:

• Fischer Elektronik - FK 244 13 D PAK
• Fischer Elektronik - WLK 5
• Panasonic - EYGA121807A
• Roth Elektronik - RE901