Datasheet IRF130 - International Rectifier N CH MOSFET, 100 V, 14 A, TO-204AA

International Rectifier IRF130

Part Number: IRF130

Detailed Description

Manufacturer: International Rectifier

Description: N CH MOSFET, 100 V, 14 A, TO-204AA

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Docket:
PD - 90333F
IRF130 REPETITIVE A ALANCHE AND dv/dt RATED V JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 100V, N-CHANNEL
Product Summary
Part Number IRF130 BVDSS 100V RDS(on) 0.18 ID 14A
The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 14 A
  • Current Id Max: 14 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 100 V
  • Fixing Centres: 30 mm
  • Full Power Rating Temperature: 25°C
  • Lead Spacing: 11 mm
  • Mounting Type: Through Hole
  • Number of Pins: 2
  • Number of Transistors: 1
  • On State Resistance: 180 MOhm
  • Package / Case: TO-3
  • Power Dissipation Pd: 75 W
  • Pulse Current Idm: 56 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: TO-3
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 100 V
  • Voltage Vgs Max: 4 V
  • Voltage Vgs Rds on Measurement: 10 V

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