Datasheet IXTQ100N25P - IXYS MOSFET, N, TO-3P

IXYS IXTQ100N25P

Part Number: IXTQ100N25P

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-3P

Docket:
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 100N25P IXTQ 100N25P IXTT 100N25P
VDSS = 250 V ID25 = 100 A RDS(on) 27 m
Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight

Specifications:

Capacitance Ciss Typ: 6300 pF
Continuous Drain Current Id: 100 A
Current Id Max: 100 A
Drain Source Voltage Vds: 250 V
Junction to Case Thermal Resistance A: 0.21°C/W
Mounting Type: Through Hole
N-channel Gate Charge: 185nC
Number of Pins: 3
On State Resistance: 27 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: TO-3P
Power Dissipation Pd: 600 W
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 200 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: TO-3P
Transistor Polarity: N Channel
Voltage Vds Typ: 250 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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