Datasheet IXTQ30N60L2 - IXYS MOSFET, N CH, 600 V, 30 A, TO-3P

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N CH, 600 V, 30 A, TO-3P

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Docket:
Preliminary Technical Information
Linear L2TM Power MOSFET with extended FBSOA
N-Channel Enhancement Mode Avalanche rated
IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2
VDSS ID25

Specifications:

• Current Id Max: 30 A
• Drain Source Voltage Vds: 600 V
• Number of Pins: 3
• On State Resistance: 240 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 540 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-3P
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• BERGQUIST - 3223-07FR-104NH
• LAIRD TECHNOLOGIES - THER-T-LARGE
• Multicomp - MK3305
• ON Semiconductor - MC33153DG