Datasheet NTE2388 - NTE Electronics N CHANNEL MOSFET, 200 V, 18 A, TO-220

Detailed Description

Manufacturer: NTE Electronics

Description: N CHANNEL MOSFET, 200 V, 18 A, TO-220

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Docket:
NTE2388 MOSFET N­Channel Enhancement Mode, High Speed Switch
Description: The NTE2388 is an N­Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Features: D Silicon Gate for Fast Switching Speeds D Low rDS(on) to Minimize On­Losses. Specified at Elevated Temperatures. D Rugged ­ SOA is Power Dissipation Limited D Source­to­Drain Diode Characterized for Use With Inductive Loads Absolute Maximum Ratings: Drain­Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Drain­Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate­Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain

Specifications:

• Continuous Drain Current Id: 18 A
• Drain Source Voltage Vds: 200 V
• On Resistance Rds(on): 180 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Polarity: N Channel

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 273-AB