Datasheet NTE2392 - NTE Electronics N CHANNEL MOSFET, 100 V, 40 A, TO-3

Detailed Description

Manufacturer: NTE Electronics

Description: N CHANNEL MOSFET, 100 V, 40 A, TO-3

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Docket:
NTE2392 MOSFET N-Channel Enhancement Mode, High Speed Switch
Description: The NTE2392 is an N-Channel Enhancement Mode Power MOS Field Effect Transistor.

Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D Fast Switching D Low Drive Current D Ease of Paralleling D No Second Breakdown D Excellent Temperature Stability Absolute Maximum Ratings: Drain-Source Voltage (Note 1), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain-Gate Voltage (RGS = 20k, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Pulsed Drain Current (Note 3), IDM . . . . . . . . . . . . . . . .

Specifications:

• Continuous Drain Current Id: 40 A
• Drain Source Voltage Vds: 100 V
• On Resistance Rds(on): 55 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Polarity: N Channel

Accessories:

• WAKEFIELD SOLUTIONS - 403K