Datasheet IXFH14N60P - IXYS MOSFET, N, TO-247

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-247

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Docket:
PolarHVTM HiperFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFA14N60P IXFP14N60P IXFH14N60P
VDSS ID25
RDS(on) trr

Specifications:

• Capacitance Ciss Typ: 2300 pF
• Continuous Drain Current Id: 14 A
• Drain Source Voltage Vds: 600 V
• Junction to Case Thermal Resistance A: 0.42°C/W
• Mounting Type: Through Hole
• N-channel Gate Charge: 38nC
• Number of Pins: 3
• On State Resistance: 550 MOhm
• Package / Case: TO-247
• Power Dissipation Pd: 300 W
• Reverse Recovery Time trr Max: 200 ns
• Threshold Voltage Vgs Typ: 5.5 V
• Transistor Case Style: TO-247
• Transistor Polarity: N Channel
• Transistor Type: High Performance (HiPerFET)
• Voltage Vds Typ: 600 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - FK 243 MI 247 O
• Fischer Elektronik - WLK 5