Datasheet IXFH23N60Q - IXYS MOSFET, N, TO-247

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-247

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Docket:
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances
Preliminary Data Sheet
IXFH 23N60Q IXFT 23N60Q

Specifications:

• Avalanche Single Pulse Energy Eas: 1.5J
• Continuous Drain Current Id: 23 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 600 V
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Through Hole
• N-channel Gate Charge: 90nC
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 320 MOhm
• On State Resistance: 320 MOhm
• Package / Case: TO-247
• Power Dissipation Pd: 400 W
• Pulse Current Idm: 92 A
• Rate of Voltage Change dv / dt: 15V/ns
• Repetitive Avalanche Energy Max: 30mJ
• Reverse Recovery Time trr Typ: 250 ns
• Threshold Voltage Vgs Typ: 4.5 V
• Transistor Case Style: TO-247
• Transistor Polarity: N Channel
• Transistor Type: MOSFET
• Voltage Vds Typ: 600 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4.5 V
• Weight: 6 g

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 243 MI 247 H
• Fischer Elektronik - FK 243 MI 247 O
• Fischer Elektronik - SK 145/25 STS-220
• Fischer Elektronik - WLK 5