Datasheet BSN20 - NXP MOSFET, N, SOT-23

NXP BSN20

Part Number: BSN20

Detailed Description

Manufacturer: NXP

Description: MOSFET, N, SOT-23

Docket:
BSN20
N-channel enhancement mode field-effect transistor
Rev.

03 -- 26 June 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BSN20 in SOT23.

Simulation Model

Specifications:

Continuous Drain Current Id: 173 mA
Current Id Max: 173 mA
Current Temperature: 25°C
Drain Source Voltage Vds: 50 V
Mounting Type: SMD
Number of Pins: 3
Number of Transistors: 1
On State Resistance: 15 Ohm
Operating Temperature Range: -65°C to +150°C
Package / Case: SOT-23
Power Dissipation Pd: 830 mW
Power Dissipation Ptot Max: 830 mW
Pulse Current Idm: 700 mA
Rds(on) Test Voltage Vgs: 10 V
SMD Marking: M8p
SVHC: No SVHC (18-Jun-2010)
Threshold Voltage Vgs Typ: 1 V
Transistor Case Style: SOT-23
Transistor Polarity: N Channel
Voltage Vds Typ: 50 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

LICEFA - V11-7-6-10
LICEFA - V11-7
Roth Elektronik - RE901