Datasheet BSP110,115 - NXP MOSFET, N CH, 100 V, 0.52 A, SOT223

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 100 V, 0.52 A, SOT223

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Docket:
BSP110
N-channel enhancement mode field-effect transistor
Rev.

03 -- 26 July 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BSP110 in SOT223.

Specifications:

• Continuous Drain Current Id: 150 mA
• Current Id Max: 520 mA
• Drain Source Voltage Vds: 100 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 10 Ohm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-223
• Power Dissipation: 6.25 W
• Rds(on) Test Voltage Vgs: 5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 130 V
• Voltage Vgs Max: 2 V
• Voltage Vgs Rds on Measurement: 5 V

RoHS: Yes

Other Names:

BSP110115, BSP110 115