Datasheet BSP130,115 - NXP MOSFET, N CH, 300 V, 350 mA, SOT223

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 300 V, 350 mA, SOT223

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D087
BSP130 N-channel enhancement mode vertical D-MOS transistor

Specifications:

• Continuous Drain Current Id: 250 mA
• Current Id Max: 350 mA
• Drain Source Voltage Vds: 300 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 6 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation: 1.5 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 300 V
• Voltage Vgs Max: 2 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

BSP130115, BSP130 115