Datasheet PMN28UN,135 - NXP MOSFET N-CH 12 V 5.7 A SOT457

Detailed Description

Manufacturer: NXP

Description: MOSFET N-CH 12 V 5.7 A SOT457

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Docket:
PMN28UN
TrenchMOSTM ultra low level FET
M3D302
Rev.

01 -- 27 September 2002
Product data

Specifications:

• Continuous Drain Current Id: 2 A
• Current Id Max: 5.7 A
• Drain Source Voltage Vds: 12 V
• Mounting Type: SMD
• Number of Pins: 6
• On State Resistance: 34 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-457
• Power Dissipation Pd: 1.75 W
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 700 mV
• Transistor Case Style: SOT-457
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 12 V
• Voltage Vgs Max: 700 mV
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Other Names:

PMN28UN135, PMN28UN 135