Datasheet BUK96180-100A,118 - NXP N CH MOSFET, TRENCH AUTOMOTIVE, 100 V, 46 A, 4-D2PAK

Detailed Description

Manufacturer: NXP

Description: N CH MOSFET, TRENCH AUTOMOTIVE, 100 V, 46 A, 4-D2PAK

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Docket:
Philips Semiconductors
Product specification
TrenchMOS transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 .

Using 'trench' technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications.

Specifications:

• Continuous Drain Current Id: 11 A
• Drain Source Voltage Vds: 100 V
• On Resistance Rds(on): 152 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Polarity: N Channel

RoHS: Yes

Other Names:

BUK96180100A,118, BUK96180 100A,118, BUK96180-100A118, BUK96180-100A 118