Datasheet PHK12NQ10T,518 - NXP MOSFET, N CH, 100 V, 11.6 A, 8-SOIC

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 100 V, 11.6 A, 8-SOIC

Download Data Sheet

Docket:
PHK12NQ10T
N-channel TrenchMOS standard level FET
Rev.

02 -- 24 November 2009 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Continuous Drain Current Id: 11.6 A
• Drain Source Voltage Vds: 100 V
• On Resistance Rds(on): 23.7 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Polarity: N Channel

RoHS: Yes

Other Names:

PHK12NQ10T518, PHK12NQ10T 518