Datasheet PSMN003-30B - NXP MOSFET, N, D2-PAK

NXP PSMN003-30B

Part Number: PSMN003-30B

Detailed Description

Manufacturer: NXP

Description: MOSFET, N, D2-PAK

data sheetDownload Data Sheet

Docket:
PSMN003-30P; PSMN003-30B
N-channel enhancement mode field-effect transistor
Rev.

01 -- 23 October 2001 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK)

Specifications:

  • Avalanche Single Pulse Energy Eas: 500mJ
  • Capacitance Ciss Typ: 9200 pF
  • Continuous Drain Current Id: 75 A
  • Current Id Max: 75 A
  • Drain Source Voltage Vds: 30 V
  • Junction Temperature Tj Max: 175°C
  • Mounting Type: SMD
  • On State Resistance: 2.4 MOhm
  • Operating Temperature Range: -55°C to +175°C
  • Package / Case: D2-PAK
  • Power Dissipation Pd: 230 W
  • Pulse Current Idm: 400 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 2 V
  • Transistor Case Style: D2-PAK
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 3 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - FK 244 08 D2 PAK
  • Fischer Elektronik - FK 244 13 D2 PAK
  • Fischer Elektronik - WLK 5

Other Names:

PSMN00330B, PSMN003 30B

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