Datasheet 2SK1317-E - Renesas MOSFET, N, TO-3P

Renesas 2SK1317-E

Part Number: 2SK1317-E

Detailed Description

Manufacturer: Renesas

Description: MOSFET, N, TO-3P

data sheetDownload Data Sheet

Docket:
2SK1317
Silicon N Channel MOS FET
REJ03G0929-0200 (Previous: ADE-208-1268) Rev.2.00 Sep 07, 2005
Application
High speed power switching

Specifications:

  • Continuous Drain Current Id: 2.5 A
  • Current Id Max: 2.5 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 1.5 kV
  • Full Power Rating Temperature: 25°C
  • Lead Spacing: 5.45 mm
  • Mounting Type: Through Hole
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance: 12 Ohm
  • Package / Case: TO-3P
  • Power Dissipation Pd: 100 W
  • Pulse Current Idm: 7 A
  • Rds(on) Test Voltage Vgs: 15 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: TO-3P
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 1.5 kV
  • Voltage Vgs Max: 4 V
  • Voltage Vgs Rds on Measurement: 15 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - WLK 5
  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A

Other Names:

2SK1317E, 2SK1317 E

EMS supplier