Datasheet RSQ025P03TR - Rohm MOSFET, P, 30 V, 2.5 A

Detailed Description

Manufacturer: Rohm

Description: MOSFET, P, 30 V, 2.5 A

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Docket:
RSQ025P03
Transistor
4V Drive Pch MOS FET
RSQ025P03
Structure Silicon P-channel MOS FET External dimensions (Unit : mm)

Simulation Model

Specifications:

• Continuous Drain Current Id: 2.5 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• On State Resistance: 120 MOhm
• Package / Case: TSMT6
• Power Dissipation Pd: 1.25 W
• Pulse Current Idm: 10 A
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: -2.5 V
• Transistor Case Style: TSMT
• Transistor Polarity: P Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: -30 V
• Voltage Vgs Rds on Measurement: 4 V
• Voltage Vgs th Max: -2.5 V
• Voltage Vgs th Min: -1 V

RoHS: Yes