Datasheet STD4NK60Z-1 - STMicroelectronics MOSFET N CH 600 V 4 A IPAK

Detailed Description

Manufacturer: STMicroelectronics

Description: MOSFET N CH 600 V 4 A IPAK

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Docket:
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP
N-channel 600 V - 1.76 - 4 A SuperMESHTM Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP
Features
Type STB4NK60Z STB4NK60Z-1 STD4NK60Z STD4NK60Z-1 STP4NK60Z STP4NK60ZFP
VDSS 600 V 600 V 600 V 600 V 600 V 600 V

Specifications:

• Continuous Drain Current Id: 2 A
• Current Id Max: 4 A
• Drain Source Voltage Vds: 600 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 1.76 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: IPAK
• Power Dissipation Pd: 70 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3.75 V
• Transistor Case Style: I-PAK
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

STD4NK60Z1, STD4NK60Z 1