Datasheet STD8NM60N-1 - STMicroelectronics MOSFET N CH 600 V 7 A IPAK
Part Number: STD8NM60N-1
Detailed Description
Manufacturer: STMicroelectronics
Description: MOSFET N CH 600 V 7 A IPAK
Docket:
STx8NM60N
N-channel 600 V, 0.56 ,7 A MDmeshTM II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
Features
Type STB8NM60N STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.65 < 0.65 < 0.65 < 0.65 < 0.65 ID
3
Specifications:
- Continuous Drain Current Id: 3.5 A
- Current Id Max: 7 A
- Drain Source Voltage Vds: 600 V
- Mounting Type: Through Hole
- Number of Pins: 3
- On State Resistance: 560 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: IPAK
- Power Dissipation Pd: 70 W
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: I-PAK
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vds Typ: 600 V
- Voltage Vgs Max: 25 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Other Names:
STD8NM60N1, STD8NM60N 1