Datasheet STI23NM60N - STMicroelectronics MOSFET N CH 600 V 19 A I2PAK TO262

STMicroelectronics STI23NM60N

Part Number: STI23NM60N

Detailed Description

Manufacturer: STMicroelectronics

Description: MOSFET N CH 600 V 19 A I2PAK TO262

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Docket:
STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N
N-channel 600 V - 0.150 - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmeshTM Power MOSFET
Features
Type STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N
1.

Limited only by maximum temperature allowed

Specifications:

  • Continuous Drain Current Id: 9.5 A
  • Current Id Max: 19 A
  • Drain Source Voltage Vds: 600 V
  • Mounting Type: Through Hole
  • Number of Pins: 3
  • On State Resistance: 150 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: I2-PAK
  • Power Dissipation Pd: 150 W
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: I2-PAK
  • Transistor Polarity: N Channel
  • Transistor Type: Power MOSFET
  • Voltage Vds Typ: 600 V
  • Voltage Vgs Max: 25 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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