Datasheet STP30NM60N - STMicroelectronics MOSFET N CH 600 V 25 A TO-220

Detailed Description

Manufacturer: STMicroelectronics

Description: MOSFET N CH 600 V 25 A TO-220

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Docket:
STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N
N-channel 600 V, 0.1 , 25 A, MDmeshTM II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
Features
Type STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max <0.13 <0.13 <0.13 <0.13 <0.13 ID 25A 25A 25A(1) 25A 25A PW 190 W 190 W 40 W 190 W 190 W
3 1 2

Specifications:

• Continuous Drain Current Id: 12.5 A
• Current Id Max: 25 A
• Drain Source Voltage Vds: 600 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 100 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-220
• Power Dissipation Pd: 190 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes