Datasheet IRFU214PBF - Vishay MOSFET, N, 250 V, 2.2 A, I-PAK

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N, 250 V, 2.2 A, I-PAK

Specifications:

• Alternate Case Style: I-PAK
• Avalanche Single Pulse Energy Eas: 190mJ
• Capacitance Ciss Typ: 140 pF
• Continuous Drain Current Id: 2.2 A
• Current Iar: 2.2 A
• Current Id Max: 2.2 A
• Current Idss Max: 25 µA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 250 V
• Fall Time tf: 7 ns
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Junction to Case Thermal Resistance A: 5 °C/W
• Lead Length: 9.65 mm
• Lead Spacing: 2.28 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance: 2 Ohm
• On State resistance @ Vgs = 10V: 2 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: IPAK
• Power Dissipation Pd: 25 W
• Pulse Current Idm: 8.8 A
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 2.5mJ
• Rise Time: 7.6 ns
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: I-PAK
• Transistor Polarity: N Channel
• Turn Off Time: 16 ns
• Turn On Time: 7 ns
• Voltage Vgs Max: 20 V

RoHS: Y-Ex

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