Datasheet IRFU9110PBF - Vishay MOSFET, P, -100 V, -3.1 A, I-PAK

Detailed Description

Manufacturer: Vishay

Description: MOSFET, P, -100 V, -3.1 A, I-PAK

Specifications:

• Alternate Case Style: I-PAK
• Continuous Drain Current Id: 3.1 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 100 V
• Full Power Rating Temperature: 25°C
• Junction to Case Thermal Resistance A: 5 °C/W
• Lead Length: 9.65 mm
• Lead Spacing: 2.28 mm
• Mounting Type: Through Hole
• Number of Transistors: 1
• On State Resistance: 1.2 Ohm
• Package / Case: IPAK
• Power Dissipation Pd: 25 W
• Pulse Current Idm: 12 A
• Threshold Voltage Vgs Typ: -2 V
• Transistor Case Style: I-PAK
• Transistor Polarity: P Channel
• Turn Off Time: 17 ns
• Turn On Time: 27 ns
• Voltage Vds Typ: -100 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Y-Ex

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