Si2333DS
Vishay Siliconix P-Channel 12-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
-12 RDS(on) (Ω) ID (A) 0.032 at VGS = -4.5 V -5.3 0.042 at VGS = -2.5 V -4.6 0.059 at VGS = -1.8 V -3.9 • Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET APPLICATIONS
• Load Switch
• PA Switch TO-236
(SOT-23)
G 1
3 S D 2 Top View
Si2333DS (E3)*
* Marking Code
Ordering Information: Si2333DS-T1-E3 (Lead (Pb)-free)
Si2333DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 5s Steady State Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C
TA = 70 °C Continuous Source Current (Diode Conduction)a, b IS
TA = 25 °C
TA = 70 °C PD -4.1 -4.2 -3.3
-20 -1.0 -0.6 1.25 0.75 0.8 0.48 TJ, Tstg Operating Junction and Storage Temperature Range V -5.3 IDM Pulsed Drain Current Maximum Power Dissipationa, b ID Unit -55 to 150 A W
°C THERMAL RESISTANCE RATINGS
Parameter …
