Datasheet SI1012X-T1-E3 - Vishay MOSFET, N CH, 20 V, 0.5 A, SC89
Part Number: SI1012X-T1-E3
Detailed Description
Manufacturer: Vishay
Description: MOSFET, N CH, 20 V, 0.5 A, SC89
Docket:
Si1012R/X
Vishay Siliconix
N-Channel 1.8 V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.70 at VGS = 4.5 V 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V ID (mA) 600 500 350
Specifications:
- Continuous Drain Current Id: 500 mA
- Current Id Max: 500 mA
- Drain Source Voltage Vds: 20 V
- Mounting Type: SMD
- Number of Pins: 3
- On Resistance Rds(on): 1.25 Ohm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SC-89
- Power Dissipation: 250 mW
- Rds(on) Test Voltage Vgs: 4.5 V
- Threshold Voltage Vgs Typ: 900 mV
- Transistor Case Style: SC-89
- Transistor Polarity: N Channel
- Voltage Vds Typ: 20 V
- Voltage Vgs Max: 900 mV
- Voltage Vgs Rds on Measurement: 4.5 V
RoHS: Yes
Other Names:
SI1012XT1E3, SI1012X T1 E3