Datasheet SI3460DDV-T1-GE3 - Vishay MOSFET, N CH, D-S, 20 V, 7.9 A, TSOP6

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, D-S, 20 V, 7.9 A, TSOP6

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Docket:
Si3460DDV
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) () 0.028 at VGS = 4.5 V 0.032 at VGS = 2.5 V 0.038 at VGS = 1.8 V ID (A)d 7.9 7.4 6.8 6.7 nC Qg (Typ.)

Specifications:

• Current Id Max: 6.2 A
• Drain Source Voltage Vds: 20 V
• Number of Pins: 6
• On State Resistance: 0.023 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 1.7 W
• Rds(on) Test Voltage Vgs: 4.5 V
• Transistor Case Style: TSOP
• Transistor Polarity: N Channel
• Voltage Vgs Max: 8 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Electrolube - SMA10SL

Other Names:

SI3460DDVT1GE3, SI3460DDV T1 GE3